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BC电池解决方案
背接触(BC)电池技术通过将正负电极全部置于电池背面,彻底消除正面栅线遮光损失,实现更高的光吸收率和转换效率。根据2025年最新实验数据,BC电池的实验室效率已突破27.81%,远超TOPCon(26.1%)和HJT(25.9%)。这一突破得益于三大核心技术革新:
- 激光图形化技术:替代传统光刻工艺,将生产成本降低60%,精度提升至±3μm,且无需耗材(见表1);
- 单晶硅片优化:通过N型硅片纯度提升和电阻率控制,将电池寿命延长30%以上;
- 组件封装革命:采用COB互联技术,减少焊带损耗90%以上,组件可靠性提升50%。
BC电池基础结构
BC电池的基本结构从上至下依次为:SiNx/SiO2 - n+ Si(掺磷)- Si基底 - p+(硼扩)/n++(磷扩) Si - SiO2/SiNx - 金属电极(叉指)。其中,n+ Si(掺磷)层利用场钝化效应降低表面少子浓度,从而降低表面复合速率;p+ Si(硼扩)层与N型硅基底形成p-n结,有效分流载流子;n++ Si(磷扩)层与n型硅形成高低结,增强载流子的分离能力,这是IBC电池的核心技术。SiO2/SiNx层在背面抑制IBC太阳电池的载流子复合,在正面则作为减反层提高发电效率。
表1:BC电池与传统技术关键参数对比
| 参数 | 传统PERC | TOPCon | BC技术 |
|---|---|---|---|
| 实验室效率 | 24.5% | 26.1% | 27.81% |
| 量产成本(元/W) | 0.95 | 1.05 | 1.10(预计2025年降至0.98) |
| 抗阴影性能 | 低 | 中 | 高 |
相关FAQs
Q1:BC电池是否面临TOPCon的激烈竞争?
A1:短期内TOPCon凭借成熟产能仍占主流,但BC在效率(+1.8%)、LCOE(-16%)和场景适应性上的优势将推动其2025年后加速替代。
Q2:BC技术的主要挑战是什么?
A2:当前核心在于量产良率(需稳定在95%以上)和硅片纯度控制,但激光工艺进步正逐步解决这些问题。
Q3:BC电池是否适合大型地面电站?
A3:是的。其高双面率和抗PID特性尤其适合沙漠、山地等复杂环境,且跟踪支架适配性优于传统技术。
WAFER PROFILER CVP21
The Wafer Profiler CVP21 is a handy tool to measure doping profiles in semiconductor layers by Electrochemical Capacitance Voltage Profiling (ECV-Profiling, CV-Profiling) in semiconductor research or production.
This ECV Profiler (CV-Profiler, C-V-Profiler) furthermore is a very good choice to analyze or develop strategies for Photo-Electrochemical Wet Etching (PEC-Etching) of semiconductors
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TLM-SCAN+
TLM-SCAN+
Contact resistivity and more
This compact instrument measures contact resistivity, finger line resistance, finger width, and finger height of a finished solar cell or on test structures.
Motorized in all axes it is capable of creating maps of all these methods by pushing a single button.
Four point probe heads for measuring the sheet resistance of thin diffused layers and resistivity of wafers make the TLM-SCAN+ a low-cost yet fast and high-quality four-point-probe mapper.
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